Synopsis
The insulated gate bipolar transistor (IGBT) and thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS converters for many years and now have been developed for higher power use. These devices also use high breakdown voltage and conduction losses in BJT to fulfill current power requirement.
The global IGBT and Thyristor Market was valued at US$ 5691.2 million in 2023 and is anticipated to reach US$ 8492.5 million by 2030, witnessing a CAGR of 5.8% during the forecast period 2024-2030.
North American market for IGBT and Thyristor is estimated to increase from $ million in 2023 to reach $ million by 2030, at a CAGR of % during the forecast period of 2024 through 2030.
Asia-Pacific market for IGBT and Thyristor is estimated to increase from $ million in 2023 to reach $ million by 2030, at a CAGR of % during the forecast period of 2024 through 2030.
The major global manufacturers of IGBT and Thyristor include Fuji Electric, ABB, Infineon Technologies, ON Semiconductor, Hitachi, Mitsubishi Electric, Littelfuse (IXYS), Toshiba and SEMIKRON, etc. In 2023, the world’s top three vendors accounted for approximately % of the revenue.
This report aims to provide a comprehensive presentation of the global market for IGBT and Thyristor, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding IGBT and Thyristor.
Report Scope
The IGBT and Thyristor market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global IGBT and Thyristor market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the IGBT and Thyristor manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.
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Market Segmentation
By Company
- Fuji Electric
- ABB
- Infineon Technologies
- ON Semiconductor
- Hitachi
- Mitsubishi Electric
- Littelfuse (IXYS)
- Toshiba
- SEMIKRON
- Danfoss
- STARPOWER SEMICONDUCTOR
Segment by Type
- High Power
- Medium Power
- Low Power
Segment by Application
- Flexible AC Transmission System (FACTS)
- HVDC
Production by Region
- North America
- Europe
- China
- Japan
Consumption by Region
- North America (United States, Canada)
- Europe (Germany, France, U.K., Italy, Russia)
- Asia-Pacific (China, Japan, South Korea, India, Australia, China Taiwan, Indonesia, Thailand, Malaysia)
- Latin America (Mexico, Brazil, Argentina)
- Middle East & Africa (Turkey, Saudi Arabia, UAE)
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of IGBT and Thyristor manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of IGBT and Thyristor by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of IGBT and Thyristor in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
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